CoolSiC ™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性，从而增强了设备性能、稳健性和易用性等独特优势。 IMZA65R107M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术，并经过优化，在毫不折衷的情况下，在应用中实现最低损耗，并在运行中实现最佳可靠性。
英飞凌 SiC MOSFET 采用 TO247 4 引脚封装，可降低源极寄生电感对门极电路的影响，从而加快开关速度，提高效率。
Infineon 650V CoolSiC™ MOSFETs offer a perfect response to the progressing mega trends: more efficiency and power density.
650 V CoolSiC™ technology parameters in a straight comparison with the 600 V CoolMOS™ CFD7.
Get familiar with the main target topologies and the benefits 650 V CoolSiC™ has to offer.
Understand critical design information in order to get the best out of the 650 V CoolSiC™.
Understand why to use WBG switches for bi-directional converters, the topologies used and how they function.
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